#
# arev:/usr/local/unicat/unireq/beamreq/req00060.txt
# UNICAT Member Beam Time Request  #60

# created Fri May 07 11:10:48 CDT 1999
#

days:
	6

description:
	We will measure evolution of morphology,roughness, strain and surface
	structural symmetries during epitaxial growth on semiconductor
	surfaces. Real time RSXD will be used. We expect to test the software
	integration between the Green CCD and Spec during the experiment.
	The systems of interest include Si, Ge, Sn or Ag growth on Si or Ge 
	substrates. Surfactant such as C60, As, N2 can be used

equipment+required:
	Green CCD

experiment:
	Time resolved RSXD during epitaxial growth

hazards:
	In the case of As surfactant, we can use already established
	safety envelope for As generation from GaAs.

name:
	Hawoong Hong

new+request:
	on

nonmembers:
	

station:
	33ID-E

unacceptable+dates:
	6/23-6/27 (absolutely unacceptable)
	



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