#
# arev:/usr/local/unicat/unireq/beamreq/req00071.txt
# UNICAT Member Beam Time Request  #71

# created Wed Jun 30 16:51:23 CDT 1999
#

days:
	6

description:
	Real time RSXD will measure the evolution of morphology, roughness,
	strain and surface structural symmetries during epitaxial growth on 
	semiconductor surfaces. The software has been developed to interface
	Spec and the Green CCD for this purpose. Main area of interest is
	growth at high temperatures where the mobility of semiconductor atoms
	is high and real time measurements are called for instead of post-
	cool-dwon measurements. The candidate systems are Si,Ge and Ag films
	on Si and Ge substrates. 

equipment+required:
	

experiment:
	Time resolved RSXD during MBE growth

hazards:
	None

name:
	Hawoong Hong

nonmembers:
	

station:
	33ID-E

unacceptable+dates:
	9/8-9/14



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