#
# arev:/usr/local/unicat/unireq/beamreq/req00113.txt
# UNICAT Member Beam Time Request  #113

# created Fri Mar 31 17:41:43 CST 2000
#

collaboration:
	Yes

days:
	6

description:
	Some low temperature metal films on semiconductor surfaces form islands
	of uniform heights upon annealing. For example Pb/Si(111) can form
	mostly 5, 7 or 9 ML islands depending on the coverage, deposition 
	temperature and annealing processes. Energy difference in electronic
	states caused by quantum confinement and charge transfer has been
	singlely proposed to expalin this magical phenomena. We will 
	investigate kinetics of islands formation and their strain
	during growth and annealing at various conditions. 
	Especially, Pb/Si is an attractive system because a clean Si surface
	can be regenerated repeatedly without changing the sample.

equipment+required:
	

experiment:
	Kinetics of uniform-height metal-islands fromation

hazards:
	Suppply of liquid nitrogen is required.

name:
	Hawoong Hong

new+request:
	on

nonmembers:
	

station:
	33ID-E

unacceptable+dates:
	5/11-5/21



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