#
# arev:/usr/local/unicat/unireq/beamreq/req00140.txt
# UNICAT Member Beam Time Request  #140

# created Sun Sep 24 22:56:26 CDT 2000
#

collaboration:
	No

collaborator+Hawoong:
	on

contact:
	t-chiang@uiuc.edu

days:
	4

description:
	Further data will be taken on the epitaxial growth of As on Si(111). 
	Analysis from the previous experiment has revealed areas where
	that data set is deficient, hindering analysis. As before, after 
	single monolayer As deposition, crystal truncation rods will be 
	collected at energies above and below the As absorption edge to 
	highlight adsorbate contribution.  These will be analyzed to 
	accurately determine surface relaxation and reconstruction.
	

equipment+required:
	Surface diffraction chamber, CCD

experiment:
	Anomalous scattering from As/Si(111)

foreign+nationals:
	

hazards:
	Normal procedures for handling small quantities of As inside the surface
	diffraction chamber.  All samples handled externally are in solid form
	and stable in air - do not ingest or inhale

name:
	T.-C. Chiang

new+request:
	on

nonmembers:
	

station:
	33ID-E

unacceptable+dates:
	dec 4-8



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