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# top.uni.aps.anl.gov:/home/www/beamtime-requests/req00186.txt
# UNICAT Member Beam Time Request  #186

# created Sat Jun 02 12:37:32 CDT 2001
#
collaboration:
	Yes

contact:
	h-hong@uiuc.edu

days:
	6

description:
	RSXD and time-resolved RSXD techniques have been well developed and demonstrated for the investigation during simple deposition processes. RSXD will be used this time to monitor facetting and strain. Well developed facets from small islands will exhibit long CTRs normal to the facets. The lines of tilted CTRs should appear on RSXD images. Also, strained CTRs should be present in the RSXD images. The onset of facetting and strain relaxation with time are particularily important in this study.
	Ge/Si(100) and Ge(1-x)Sn(x)/Ge(100) are candidate systems. This will be the start of a series of experiments with heteoepitaxial semiconductor systems. After Gas Source MBE capability is developed, systems with various composition will be readily available to this kind of study.

equipment+required:
	Surface diffractometer

experiment:
	RSXD  from strained and facetted films

foreign+nationals:
	Zhongming Wu
	Hawoong Hong
	Leonardo Basile

hazards:
	

minimumdays:
	3

name:
	Hawoonh Hong

new+request:
	on

nonmembers:
	

station:
	33ID-E

unacceptable+dates:
	


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