####################################################
# Z. Q. Ma <zhongma@uiuc.edu>
# requesting 4 days, at minimum=3 days
# beamline 33ID, "Epitaxial growth and in-situ x-ray structural analysis of single crystal TiN films by PLD"
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# top:/home/www/beamtime-requests/req00249.txt
# UNICAT Member Beam Time Request  #249
# created Fri Mar 15 14:39:34 CST 2002
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beamline:
	33ID

collaboration:
	Yes

contact:
	zhongma@uiuc.edu

days:
	4

description:
	Besides many other significant physical properties, TiN is used as
	a diffusion barrier in the electronic industry.  Its single crystal
	structure leads to a much lower resistivity, making it suitable for
	contact metallurgy. 
	
	Using pulsed laser deposition (PLD), heteroepitaxial growth of
	single-crystalline titanium nitride (TiN) films has been done on
	the low index plane of silicon and sapphire substrates at a
	relatively low deposition temperature. Nanocrystal and microcrystal
	TiN thin films with uniform grain size have been achieved simply
	through control of the substrate temperature. Furthermore, the
	formation of single crystal TiN films occurs on both lattice-matched
	substrates (such as MgO (100)) and lattice-mismatched substrates
	(such as Si (100) or Al2O3 (0001)). The real time growth process,
	however, has not been involved in the experimental research in the
	past. 
	
	It is well known that the initial growth stages play a critical role
	in the formation of the microstructure and crystallinity of TiN thin
	films.  Many important physical parameters, i.e., surface energy,
	strain, thermal diffusion, adatom mobility, thermal relaxation and
	degree of chemical reactivity, are relative to the growth process.
	X-ray diffraction with a synchrotron source provides a method for
	in-situ observation of the formation of TiN thin films on different
	substrates. 
	
	In this proposal, we suggest using UNICAT's PLD chamber to study the
	growth of TiN films on a Si(100) substrate.  In the experiment,
	successive measurements of various points in reciprocal space will be
	performed while the growth is in progress.  Post-deposition,
	truncation rod scans and rocking curves will also be measured and
	used to evaluate film orientation and stoichiometry.  Eventually,
	macroscopic properties of the grown films will be correlated back to
	early growth processes and conditions.

equipment+required:
	PLD chamber for 33-IDD

experiment:
	Epitaxial growth and in-situ x-ray structural analysis of single crystal TiN films by PLD

foreign+nationals:
	Dr. Z. Q. Ma

hazards:
	HF will be used to etch the substrate before deposition.

minimumdays:
	3

name:
	Z. Q. Ma

nonmembers:
	

unacceptable+dates:
	** Please schedule before July 1
	
	but please _try_ not to schedule on these dates:
	May 29-June 3
	June 7-10
	June 20-24 
	June 27-July 1


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