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# Rozaliya Barabash <barabashr@ornl.gov>
# requesting 9 days, at minimum=7 days
# beamline 34ID-E, S[atially resolved characterization of the FIB structured GaN thinlayers
# instrument 34ID-E microbeam
####################################################
# top:/home/www/beamtime-requests/req00831.txt
# UNICAT Member Beam Time Request  #831
# created Fri Aug 19 08:15:06 CDT 2005
####################################################

apsrun:
	2005-03

beamline:
	34ID-E

collaboration:
	No

collaborator_Wenjun:
	ON

contact:
	barabashr@ornl.gov

days:
	9

description:
	The spatial distribution of strain, dislocations, and crystallographic orientation in uncoalesced GaN layers grown on Si(111) substrates by maskless cantilever epitaxy is studied by polychromatic x-ray microdiffraction,(PXM). Tilt boundaries formed at the column/wing interface depending on the growth conditions. The measurements allow to reveal  the trend of the free-hanging wings  tilt at room temperature. A depth dependent deviatoric strain gradient is found in the GaN layers, and a misorientation between the GaN(0001) and the Si(111) surface normal is observed and quantified.

equipment_required:
	

experiment:
	S[atially resolved characterization of the FIB structured GaN thinlayers

foreign_nationals:
	Rozaliya Barabash - Permanent US resident

hazards:
	None

instrument:
	34ID-E microbeam

instrument_other:
	

minimumdays:
	7

name:
	Rozaliya Barabash

nonmembers:
	

submit:
	Submit

unacceptable_dates:
	November 26-Dec 2
Dec 9- Dec 31

z34ID_details:
	First three days of the experiment may be run in parasitic moce. After we make first brief examination of the sample we need at least 4 days non parasitic to perform spatially and depth resolved measurements with monochromatic beam

z34ID_parasitic:
	no

z34ID_taper:
	yes


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