####################################################
# Jaseung Ku <jku2@uiuc.edu>
# requesting 4 days, at minimum=3 days
# beamline 33ID, Reflection Surface X-ray  Diffraction Study of Indium Thin Film on Si(111)
# instrument 33ID-E surface
####################################################
# top:/home/www/beamtime-requests/req01089.txt
# UNICAT Member Beam Time Request  #1089
# created Wed Dec 13 17:05:43 CST 2006
####################################################

apsrun:
	2007-01

beamline:
	33ID

collaboration:
	No

contact:
	jku2@uiuc.edu

days:
	4

description:
	A rectangular piece of bare Si(111)substrate is mounted on a liquid-nitrogen-cooled manipulator. The sample is cleaned up by direct current heating to get 7x7 reconstructed surface. The sample is cooled down to liquid nitrogen temperature, and then indium overlayers are deposited up to about 20 monolayers using Molecular Beam Epitaxy(MBE) method. During deposition, time-resolved surface x-ray diffraction patterns are recorded by a CCD camera.
Afterwards, the sample is heated and kept at a certain temperature to remove indium layers and then the same procedure is carried out to obtain a newly cleaned Si(111)7x7 surface. Once deposition is completed, the sample temperature is slowly ramped until melting is observed(A Bragg peak disappears),while x-ray reflectivity is being recorded. The above procedure will be repeated with different film thickness, so that a whole series of data set will be obtained.

equipment_required:
	

experiment:
	Reflection Surface X-ray  Diffraction Study of Indium Thin Film on Si(111)

foreign_nationals:
	

hazards:
	

instrument:
	33ID-E surface

instrument_other:
	

minimumdays:
	3

name:
	Jaseung Ku

new_request:
	ON

nonmembers:
	

submit:
	Submit

unacceptable_dates:
	02/17/2007-02/18/2007
03/05/2007-03/09/2007

z34ID_change_undulator:
	no

z34ID_details:
	

z34ID_on_axis:
	no

z34ID_parasitic:
	no

z34ID_taper:
	no


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