#################################################### # Rozaliya Barabash # requesting 6 days, at minimum=4 days # beamline 34ID-E, Analysis of spatially resolved defects distribution in epitaxially grown GaN films # instrument 34ID-E microbeam #################################################### # top:/home/www/beamtime-requests/req01130.txt # UNICAT Member Beam Time Request #1130 # created Fri Apr 27 15:07:44 CDT 2007 #################################################### apsrun: 2007-02 beamline: 34ID-E collaboration: No collaborator_Wenjun: ON contact: barabashr@ornl.gov days: 6 description: GaN films are the main materials for solid state lightening. Epitaxial growth of GaN films results in the formation of dislocations, strains an tilts which spoil optical properties of the film. Understanding of the defects distribution under different growth conditions helps to propose new technological strategy in solid state lightening. equipment_required: experiment: Analysis of spatially resolved defects distribution in epitaxially grown GaN films foreign_nationals: hazards: No hasards instrument: 34ID-E microbeam instrument_other: minimumdays: 4 name: Rozaliya Barabash nonmembers: submit: Submit unacceptable_dates: June 1 -June 11; July 7- July 22; August 1-August 13 z34ID_change_undulator: yes z34ID_details: z34ID_on_axis: yes z34ID_parasitic: no z34ID_taper: no #REMOTE_HOST: barabashr2k.ornl.gov #REMOTE_ADDR: 160.91.156.82 #CONTENT_LENGTH: 893 #HTTP_REFERER: http://www.uni.aps.anl.gov/admin/unireq.html #HTTP_USER_AGENT: Mozilla/5.0 (Windows; U; Windows NT 5.0; en-US; rv:1.8.0.11) Gecko/20070312 Firefox/1.5.0.11